Name: Modeling and Characterization of rf and Microwave Power Fets Paperback (The Cambridge rf and Microwave Engineering Series) (en Inglés)
Price: 447.93 PEN
Availability: InStock
Author: Aaen, Peter ; Plá, Jaime A. ; Wood, John
ISBN: 9780521336178

portada Modeling and Characterization of rf and Microwave Power Fets Paperback (The Cambridge rf and Microwave Engineering Series) (en Inglés)

Modeling and Characterization of rf and Microwave Power Fets Paperback (The Cambridge rf and Microwave Engineering Series) (en Inglés)

Formato

Libro Físico

Autor

John Wood

Peter Aaen

Jaime A. Plá

Editorial

Cambridge University Press

Año

2011

Idioma

Inglés

N° páginas

380

Encuadernación

Tapa Blanda

Dimensiones

24.4 x 17.0 x 2.0 cm

Peso

0.60 kg.

ISBN

0521336171

ISBN13

9780521336178

N° edición

Categorías

Electrónica: circuitos y componentes
Tecnología de microondas

Modeling and Characterization of rf and Microwave Power Fets Paperback (The Cambridge rf and Microwave Engineering Series) (en Inglés)

John Wood (Autor) · Peter Aaen (Autor) · Jaime A. Plá (Autor) · Cambridge University Press · Tapa Blanda

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Reseña del libro "Modeling and Characterization of rf and Microwave Power Fets Paperback (The Cambridge rf and Microwave Engineering Series) (en Inglés)"

This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this was the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices.