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DC, microwave, noise, and degradation properties of GaN based HEMTs (en Inglés)
Congyong Zhu
(Autor)
·
Scholars' Press
· Tapa Blanda
DC, microwave, noise, and degradation properties of GaN based HEMTs (en Inglés) - Zhu, Congyong
S/ 310,51
S/ 621,03
Ahorras: S/ 310,51
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Origen: Estados Unidos
(Costos de importación incluídos en el precio)
Se enviará desde nuestra bodega entre el
Miércoles 17 de Julio y el
Miércoles 31 de Julio.
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Reseña del libro "DC, microwave, noise, and degradation properties of GaN based HEMTs (en Inglés)"
The advent of GaN based HEMTs has attracted enormous interest due to excellent material and device performance in the field of high-power and high-frequency amplifiers, as well as high voltage power switches. However, the commercialization of GaN based HEMTs requires detailed and comprehensive understanding on the material properties, device operation mechanisms, degradation behaviors and reliability properties. This book has a comprehensive study on the important issues regarding the device operation of GaN based HEMTs, which includes the DC, microwave, and noise properties with special focus on the device degradation study. The device degradation mechanisms as wells the role of traps have also been well explained
