Name: Design of GaN-based components and application to high-power antenna (en Inglés)
Price: 346.87 PEN
Availability: InStock
Author: Hamdoun, Abdelaziz
ISBN: 9786202268110

portada Design of GaN-based components and application to high-power antenna (en Inglés)

Formato

Libro Físico

Autor

Abdelaziz Hamdoun

Editorial

Editions Universitaires Europeennes

Idioma

Inglés

N° páginas

236

Encuadernación

Tapa Blanda

Dimensiones

22.9 x 15.2 x 1.4 cm

Peso

0.35 kg.

ISBN13

9786202268110

Categorías

Electricidad, electromagnetismo y magnetismo

Design of GaN-based components and application to high-power antenna (en Inglés)

Abdelaziz Hamdoun (Autor) · Editions Universitaires Europeennes · Tapa Blanda

Libro Físico

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Origen: Estados Unidos (Costos de importación incluídos en el precio)

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Reseña del libro "Design of GaN-based components and application to high-power antenna (en Inglés)"

This work demonstrates the feasibility of using gallium nitride (GaN) technology in reconfigurable RF systems. GaN-based varactor diodes and switch circuits are pursued as promising candidates for high-power/high-frequency applications. The first part is devoted to active GaN device development. Active components were realized using the Canadian National Research Council (NRC) GaN HEMTs process. Based on three process, such as, GaN150v0 (gate length of 0.15um), GaN500v1 and GaN500v2 (both with gate length of 0.5um), many varactor diodes with size different have been manufactured and characterized via DC and RF smallsignal and large-signal measurements. Then, the varactor diodes were modeled by analytic equations containing empirical coefficients. These expressions have been introduced for the first time for the voltage dependency of equivalent capacitance (CEq) and series resistance (REq) and can be used as a general model to represent the nonlinear behavior of GaN based varactors. For small-signal operation, all of the developed equations describing REq and CEq are only bias voltage and device geometry dependent.